Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs)
grown on sapphire and GaN substrates were investigated. Temperature-dependent …
grown on sapphire and GaN substrates were investigated. Temperature-dependent …
Three-dimensional mapping of quantum wells in a GaN/InGaN core–shell nanowire light-emitting diode array
Correlated atom probe tomography, cross-sectional scanning transmission electron
microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN …
microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN …
Abnormal Stranski–Krastanov mode growth of green InGaN quantum dots: morphology, optical properties, and applications in light-emitting devices
Stranski–Krastanov (SK) growth mode is widely adopted for the self-assembled growth of
semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential …
semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential …
Comparison of the photocatalytic degradation of trypan blue by undoped and silver-doped zinc oxide nanoparticles
TN Ravishankar, K Manjunatha… - Materials science in …, 2014 - Elsevier
Zinc oxide (ZnO) and silver doped zinc oxide (ZnO: Ag) nanoparticles were prepared using
nitrates of zinc and silver as oxidizers and ethylene diaminetetraacetic acid (EDTA) as a fuel …
nitrates of zinc and silver as oxidizers and ethylene diaminetetraacetic acid (EDTA) as a fuel …
External catalyst-free InGaN photoelectrode for highly efficient energy conversion and H2 generation
GaN is a well-known material whose energy band edges can straddle the redox potentials
deep in the visible and infrared wavelengths, thereby promising a drastically improved …
deep in the visible and infrared wavelengths, thereby promising a drastically improved …
Recombination pathways in green InGaN/GaN multiple quantum wells
This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN
multiple quantum well (MQW) light-emitting diode (LED) with green emission …
multiple quantum well (MQW) light-emitting diode (LED) with green emission …
Spatial and time-resolved properties of emission enhancement in polar/semi-polar InGaN/GaN by surface plasmon resonance
K Ikeda, K Kawai, J Kametani, T Matsuyama… - …, 2024 - degruyter.com
Light-emitting diodes (LEDs) are widely used as next-generation light sources because of
their various advantages. However, their luminous efficiency is remarkably low at the green …
their various advantages. However, their luminous efficiency is remarkably low at the green …
State-of-the-art and prospects for intense red radiation from core–shell InGaN/GaN nanorods
EA Evropeitsev, DR Kazanov, Y Robin, AN Smirnov… - Scientific reports, 2020 - nature.com
Core–shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for
monolithic white light-emitting diodes and multi-color displays. Such applications, however …
monolithic white light-emitting diodes and multi-color displays. Such applications, however …
On the reliable analysis of indium mole fraction within InxGa1− xN quantum wells using atom probe tomography
Surface crystallography and polarity are shown to influence the detection probability of In,
Ga, and N ions during atom probe tomography analysis of In x Ga 1− x N m-plane, c-plane …
Ga, and N ions during atom probe tomography analysis of In x Ga 1− x N m-plane, c-plane …
GaN‐Based Deep‐Nano Structures: Break the Efficiency Bottleneck of Conventional Nanoscale Optoelectronics
Conventional semiconducting nanowire optoelectronic devices generally exhibit low
efficiency, due to dominant nonradiative surface recombination. Here, it is shown that such a …
efficiency, due to dominant nonradiative surface recombination. Here, it is shown that such a …