Diluted magnetic semiconductors
J Kossut, W Dobrowolski - Handbook of Magnetic Materials, 1993 - Elsevier
Publisher Summary This chapter discusses the diluted magnetic semiconductors (DMS).
New aspects of DMS physics are reviewed and an update of various numerical data that are …
New aspects of DMS physics are reviewed and an update of various numerical data that are …
Ii–vi and iv–vi diluted magnetic semiconductors–new bulk materials and low-dimensional quantum structures
W Dobrowolski, J Kossut, T Story - Handbook of magnetic materials, 2003 - Elsevier
Publisher Summary This chapter discusses low-dimensional structures of II–VI diluted
magnetic semiconductors (DMS) with manganese and describes the carrier concentration …
magnetic semiconductors (DMS) with manganese and describes the carrier concentration …
Coupling of charge carriers with magnetic entropy for power factor enhancement in Mn doped Sn 1.03 Te for thermoelectric applications
Despite being a prospective thermoelectric (TE) material, SnTe has limited applicability due
to the very high 'hole'concentration arising from 'Sn'vacancies. Engineering of multiple …
to the very high 'hole'concentration arising from 'Sn'vacancies. Engineering of multiple …
Carrier-induced ferromagnetism in Ge0. 92Mn0. 08Te epilayers with a Curie temperature up to 190 K
Y Fukuma, H Asada, S Miyawaki, T Koyanagi… - Applied Physics …, 2008 - pubs.aip.org
IV-VI diluted magnetic semiconductor Ge 0.92 Mn 0.08 Te epilayers are grown on BaF 2
substrates by molecular beam epitaxy. The ferromagnetic behaviors, such as the …
substrates by molecular beam epitaxy. The ferromagnetic behaviors, such as the …
Corner states, hinge states, and Majorana modes in SnTe nanowires
NM Nguyen, W Brzezicki, T Hyart - Physical Review B, 2022 - APS
SnTe materials are one of the most flexible material platforms for exploring the interplay of
topology and different types of symmetry breaking. We study symmetry-protected topological …
topology and different types of symmetry breaking. We study symmetry-protected topological …
Magnetic properties of diluted magnetic semiconductors
WJM De Jonge, HJM Swagten - Journal of magnetism and magnetic …, 1991 - Elsevier
A review will be given of the magnetic characteristics of diluted magnetic semiconductors
and the relation with the driving exchange mechanisms. II–VI as well as IV–VI compounds …
and the relation with the driving exchange mechanisms. II–VI as well as IV–VI compounds …
Calculations of the ferromagnet-to-spin-glass transition in diluted magnetic systems with an RKKY interaction
PJT Eggenkamp, HJM Swagten, T Story, VI Litvinov… - Physical Review B, 1995 - APS
The transition temperatures and phase diagram of a diluted magnetic system with a
Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction are studied by extension of the model …
Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction are studied by extension of the model …
Carrier-enhanced ferromagnetism in
Y Fukuma, H Asada, M Arifuku, T Koyanagi - Applied physics letters, 2002 - pubs.aip.org
We have studied the dependence of magnetic properties on the carrier concentration of IV–
VI diluted magnetic semiconductor Ge 1− x Mn x Te prepared by ionized-cluster beam …
VI diluted magnetic semiconductor Ge 1− x Mn x Te prepared by ionized-cluster beam …
Film growth of Ge1− xMnxTe using ionized-cluster beam technique
Y Fukuma, T Murakami, H Asada, T Koyanagi - Physica E: Low-dimensional …, 2001 - Elsevier
IV–VI diluted magnetic semiconductor Ge1− xMnxTe of NaCl crystal structure is successfully
obtained with the Mn concentration x up to x= 0.96 using ionized-cluster beam technique …
obtained with the Mn concentration x up to x= 0.96 using ionized-cluster beam technique …
Magnetic phase diagram of Pb1− x− ySnyMnxTe semimagnetic semiconductors
P Łazarczyk, T Story, M Arciszewska… - Journal of magnetism and …, 1997 - Elsevier
Magnetic susceptibility and Hall effect in Pb1− x− ySnyMnx semimagnetic semiconductor
with 0.03⩽ x⩽ 0.12 were investigated as a function of carrier concentration. At low …
with 0.03⩽ x⩽ 0.12 were investigated as a function of carrier concentration. At low …