Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors
Wide bandgap nitride semiconductors have recently attracted a great level of attention
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …
Group III-nitride based hetero and quantum structures
B Monemar, G Pozina - Progress in Quantum Electronics, 2000 - Elsevier
The present paper attempts an overview of a presently very active research field: the III-
nitrides and their interesting possibilities for a range of device applications employing …
nitrides and their interesting possibilities for a range of device applications employing …
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field
effect transistors is examined theoretically and experimentally. Based on an analysis of the …
effect transistors is examined theoretically and experimentally. Based on an analysis of the …
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
IP Smorchkova, CR Elsass, JP Ibbetson… - Journal of applied …, 1999 - pubs.aip.org
The formation of the two-dimensional electron gas (2DEG) in unintentionally doped Al x Ga
1− x N/GaN (x⩽ 0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy …
1− x N/GaN (x⩽ 0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy …
[HTML][HTML] Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
We report on record electron mobility values measured in lightly Si doped homoepitaxial β-
Ga 2 O 3 grown by metal-organic chemical vapor deposition. The transport properties of the …
Ga 2 O 3 grown by metal-organic chemical vapor deposition. The transport properties of the …
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
MA Khan, X Hu, G Sumin, A Lunev… - IEEE Electron …, 2000 - ieeexplore.ieee.org
We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect
transistor (MOS-HFET) and present the results of the comparative studies of this device and …
transistor (MOS-HFET) and present the results of the comparative studies of this device and …
Gas sensitive GaN/AlGaN-heterostructures
High electron mobility transistors (HEMT) based on GaN/AlGaN-heterostructures have been
fitted with catalytically active platinum (Pt) gate electrodes to induce gas sensitivity. Due to …
fitted with catalytically active platinum (Pt) gate electrodes to induce gas sensitivity. Due to …
[HTML][HTML] Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures
The piezoelectric and spontaneous polarization of wurtzite Sc x Al 1− x N, Ga x Al 1− x N,
and In x Al 1− x N ternary compounds dramatically affects the electrical properties of …
and In x Al 1− x N ternary compounds dramatically affects the electrical properties of …
The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN
D Zanato, S Gokden, N Balkan… - Semiconductor …, 2004 - iopscience.iop.org
We present the results of our experimental and theoretical studies concerning the
temperature dependence of electron mobility in a two-dimensional electron gas (2DEG) …
temperature dependence of electron mobility in a two-dimensional electron gas (2DEG) …
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
In this article, we discuss parameters influencing (a) the properties of thin Al x Ga 1− x N
layers grown by metalorganic chemical vapor deposition and (b) the electrical properties of …
layers grown by metalorganic chemical vapor deposition and (b) the electrical properties of …