Recent progress on emerging transistor‐based neuromorphic devices

Y He, L Zhu, Y Zhu, C Chen, S Jiang… - Advanced Intelligent …, 2021 - Wiley Online Library
Human brain outperforms the current von Neumann digital computer in many aspects, such
as energy efficiency and fault‐tolerance. Inspired by human brain, neuromorphic …

Discrete memristor and discrete memristive systems

S He, D Zhan, H Wang, K Sun, Y Peng - Entropy, 2022 - mdpi.com
In this paper, we investigate the mathematical models of discrete memristors based on
Caputo fractional difference and G–L fractional difference. Specifically, the integer-order …

Retention Secured Nonlinear and Self‐Rectifying Analog Charge Trap Memristor for Energy‐Efficient Neuromorphic Hardware

G Kim, S Son, H Song, JB Jeon, J Lee… - Advanced …, 2023 - Wiley Online Library
A memristive crossbar array (MCA) is an ideal platform for emerging memory and
neuromorphic hardware due to its high bitwise density capability. A charge trap memristor …

Probabilistic computing with NbOx metal-insulator transition-based self-oscillatory pbit

H Rhee, G Kim, H Song, W Park, DH Kim, JH In… - Nature …, 2023 - nature.com
Energy-based computing is a promising approach for addressing the rising demand for
solving NP-hard problems across diverse domains, including logistics, artificial intelligence …

Analog-to-digital and self-rectifying resistive switching behavior based on flower-like δ-MnO2

S Mao, B Sun, G Zhou, Y Yang, H Zhao, Y Zhou… - Applied Surface …, 2022 - Elsevier
Memristors can be divided into two types, analog and digital, according to the characteristics
of current gradients and sudden changes. It is particularly important to realize analog and …

Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network

GS Kim, H Song, YK Lee, JH Kim, W Kim… - … applied materials & …, 2019 - ACS Publications
The thin-film growth conditions in a plasma-enhanced atomic layer deposition for the (3.0–
4.5) nm thick HfO2 film were optimized to use the film as the resistive switching element in a …

Simulation of low power self-selective memristive neural networks for in situ digital and analogue artificial neural network applications

C Tsioustas, P Bousoulas, J Hadfield… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
Self-selective memory devices are considered promising candidates for suppressing the
undesired sneak path currents that appear within crossbar memory structures and …

Deterministic Conductive Filament Formation and Evolution for Improved Switching Uniformity in Embedded Metal-Oxide-Based Memristors─ A Phase-Field Study

K Zhang, P Ganesh, Y Cao - ACS Applied Materials & Interfaces, 2023 - ACS Publications
The extreme device-to-device variation of switching performance is one of the major
obstacles preventing the applications of metal-oxide-based memristors in large-scale …

Implementation of simple but powerful trilayer oxide-based artificial synapses with a tailored bio-synapse-like structure

H Zhang, X Ju, KS Yew, DS Ang - ACS applied materials & …, 2019 - ACS Publications
The ultimate aim of artificial synaptic devices is to mimic the features of biological synapses
as closely as possible, in particular, its ability of self-adjusting the synaptic weight …

Dynamical investigation and chaotic associated behaviors of memristor Chua's circuit with a non-ideal voltage-controlled memristor and its application to voice …

K Rajagopal, S Kacar, Z Wei, P Duraisamy… - … -International Journal of …, 2019 - Elsevier
In this paper we modified the conventional Chua's circuit with a non-ideal voltage-controlled
memristor with a quadratic internal state. Dynamical behaviors of Modified Memristor based …