A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization
J Seo - Journal of Materials Research, 2021 - Springer
As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical
mechanical planarization (CMP) technology has grown by leaps and bounds over the past …
mechanical planarization (CMP) technology has grown by leaps and bounds over the past …
A review: research progress of chemical–mechanical polishing slurry for copper interconnection of integrated circuits
H Yan, X Niu, M Qu, F Luo, N Zhan, J Liu… - The International Journal …, 2023 - Springer
When the integrated circuit (IC) feature size is reduced to 0.13 μm and below, copper (Cu)
becomes the new wiring material in interconnect materials. The double damascene process …
becomes the new wiring material in interconnect materials. The double damascene process …
Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface
J Ma, N Xu, Y Luo, Y Lin, Y Pu - ACS Applied Electronic Materials, 2022 - ACS Publications
The polishing activity of CeO2 abrasives is enhanced by improving the Ce3+ concentration
on their surface. In this study, a series of Ce1–x La x O2 abrasives with different La3+ doping …
on their surface. In this study, a series of Ce1–x La x O2 abrasives with different La3+ doping …
Effects of trivalent lanthanide (La and Nd) doped ceria abrasives on chemical mechanical polishing
During chemical mechanical polishing (CMP) for a dielectric layer, Ce 3+, which is the active
site on the surface of ceria, has a significant effect on the material removal rate (MRR). Ceria …
site on the surface of ceria, has a significant effect on the material removal rate (MRR). Ceria …
Improvement of oxide chemical mechanical polishing performance by increasing Ce3+/Ce4+ ratio in ceria slurry via hydrogen reduction
Ceria-based abrasive is widely used in the oxide chemical mechanical polishing (CMP)
process due to its high polishing performance. Ce 3+ ions on the surface of ceria form a Ce …
process due to its high polishing performance. Ce 3+ ions on the surface of ceria form a Ce …
RE (La, Nd and Yb) doped CeO2 abrasive particles for chemical mechanical polishing of dielectric materials: Experimental and computational analysis
J Cheng, S Huang, Y Li, T Wang, L Xie, X Lu - Applied Surface Science, 2020 - Elsevier
Abstract Ce 3+ in CeO 2, rather than Ce 4+, is believed to provide assistance to the breaking
up of Sisingle bondO bond during chemical mechanical polishing (CMP) of silica. In the …
up of Sisingle bondO bond during chemical mechanical polishing (CMP) of silica. In the …
Synthesis, characterization of CeO2@ ZIF-8 composite abrasives and their chemical mechanical polishing behavior on glass substrate
X Yuan, C Chen, H Lei, Z Zhang - Ceramics International, 2023 - Elsevier
As a kind of abrasive, cerium oxide (CeO 2) abrasive provides the most key support for glass
planarization, whose material removal rate (MRR) is related to the concentration of Ce 3+ in …
planarization, whose material removal rate (MRR) is related to the concentration of Ce 3+ in …
Doping strategy on properties and chemical mechanical polishing performance of CeO2 Abrasives: A DFT assisted experimental study
J Ma, N Xu, J Hu, Y Luo, Y Lin, Y Pu - Applied Surface Science, 2023 - Elsevier
A series of Ce 1-x M x O 2 abrasives with different types and amounts of doping were
prepared by molten salt method. The properties of abrasives were characterized in detail by …
prepared by molten salt method. The properties of abrasives were characterized in detail by …
Direct and quantitative study of ceria–SiO2 interaction depending on Ce3+ concentration for chemical mechanical planarization (CMP) cleaning
KK Myong, J Byun, M Choo, H Kim, JY Kim… - Materials Science in …, 2021 - Elsevier
The importance of chemical mechanical planarization (CMP) and post-CMP cleaning is
highly critical because both directly affect the yields and performance of semiconductor …
highly critical because both directly affect the yields and performance of semiconductor …
A nanoclustered ceria abrasives with low crystallinity and high Ce3+/Ce4+ ratio for scratch reduction and high oxide removal rates in the chemical mechanical …
Cerium oxide nanoparticles in the size of Ca. 100 nm usually have a degree of crystallinity
over 95% and the ratio of Ce3+/Ce4+ at around 40%, which are ascribed to the intrinsic …
over 95% and the ratio of Ce3+/Ce4+ at around 40%, which are ascribed to the intrinsic …