Modelling/simulation and high-frequency characterization of hetero-junction Avalanche
Transit Time (ATT) oscillators, operating in tuned harmonic mode, are reported in the paper …

The calculated electron Hall Mobility and Hall scattering factor in n-type 6 H-SiC based on
numerical solutions to the Boltzmann transport equation are presented. These results were …

The potentials of a new lattice-matched material combination, GaAs~ Ga0. 52In0. 48P, is
explored using a computer simulation method for application as an IMPact ionization …

Extensive simulation experiments have been carried out on the DC and high-frequency
characteristics of α-(4H) Silicon Carbide based double-drift (p++ pn n++ type) impact …

SiC-based IMPATTs with its different polytypes (3C, 4H, and 6H) are modeled, designed and
a comparative study among three are presented in this paper to operate at D-band …

SiC heteropolytype structures indicate important applications in high frequency, large power
solid devices etc. In this paper, the impact avalanche transit time (IMPATT) and mixed …

We have presented a comparative account of the high frequency prospective as well as
noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of …

Terahertz (THz) technology is rapidly progressing all over the world owing to its various
application possibilities in the field of basic natural science, engineering, and medicine. In …

Ionization threshold in a semiconductor is determined through the value of band gap energy
(Eg,< 1 eV to> 5 eV), which monitors the avalanche breakdown phenomenon of …

The effect of incomplete ionization of dopants on p+ nn-n+ 4H silicon carbide (4H-SiC)
impact-ionization-avalanche-transit-time (IMPATT) diodes has been investigated …