In this paper,. an accurate analytical model has been developed to optimize the performance of an Interdigitated Graphene Electrode/p-silicon carbide (IGE/p-4H-SiC) Metal …
A Mohanty, MA Ahmad, P Kumar, R Kumar - Silicon, 2024 - Springer
Many research is underway in the semiconductor industry. Conventional MOSFETs are getting replaced with emerging devices such as junctionless field-effect-transistor (JLTFET) …
Y Zhang, K Han, J Li - Micromachines, 2020 - mdpi.com
Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which …
F Bouzid, F Pezzimenti, L Dehimi - … Methods in Physics Research Section A …, 2020 - Elsevier
In this work, we optimized the performance of a gallium nitride (GaN)-based n/p junction betavoltaic cell irradiated by the radioisotope nickel-63 (N i 63). In particular, we developed …
In this paper, an analytical model for studying the effect of light trapping mechanism on tandem solar cell performance is developed. The proposed model considers diffraction …
In this paper, a hybrid approach that combines a light trapping formalism and a metaheuristic optimization approach is suggested to enhance speed and sensing …
In this paper, a novel 4H-SiC metal–semiconductor-metal photodetector design based on Graphene electrode engineering and gold nanoparticles is proposed. The benefits of using …
Abstract Cu 2 BaSn (S, Se) 4 (CBTSSe) solar cells, are an intriguing kind of photovoltaic devices with theoretical efficiency close to 31%. Their promise in the field of renewable …
To accurately determine the Schottky barrier characteristics and elucidate the consequent impacts, it is imperative to possess a comprehensive understanding of the conduction …