We propose a high-frequency scalable electrical model of a through silicon via (TSV). The
proposed model includes not only the TSV, but also the bump and the redistribution layer …

3-D integration of microelectronic systems reduces the interconnect length, wiring delay, and
system size, while enhancing functionality by heterogeneous integration. Through silicon via …

An analytic scalable model of a differential signal through-silicon via (TSV) is proposed. This
TSV is a ground-signal-signal-ground (GSSG)-type differential signal TSV. Each proposed …

This letter reports on techniques of full-wave extractions and analytical calculations to
investigate the through-strata-via (TSV) parasitics in 3-D integration/packaging. Both …

Through-silicon-via (TSV) enables vertical connectivity between stacked chips or interposer
and is a key technology for 3-D integrated circuits (ICs). While arrays of TSVs are needed in …

In this paper, radio frequency (RF) through-silicon via (TSV) designs and models are
proposed to achieve high-frequency vertical connectivity for three dimensional (3D) multi …

In this paper, a simple closed-form model identifying the electrical behavior of a taper
through silicon via (TSV) is reported. The model is based on the Transmission Line Method …

Through glass via (TGV) is most important technology in the glass interposer. Electrical
characteristic of TGV determines the overall signal integrity of signal paths in 2.5 D/3D …

This paper proposes an equivalent lumped element model for various multi-TSV
arrangements and introduces closed form expressions for the capacitive, resistive, and …

Today, a new trend in wafer level packaging is to add more than one die in the same
package and, sometimes, to use the third dimension in order to: Decrease the form factor of …