Catalytic MoS x thin films have been directly photoelectrodeposited on GaInP2
photocathodes for stable photoelectrochemical hydrogen generation. Specifically, the MoS x …

The effects of different cation and anion interdiffusion rates when disordering In 0.53 Ga 0.47
As/InP single quantum wells are investigated using an error function distribution to model …

Using a 2D device simulation tool, we examine the high irradiance behavior of a single
junction, GaAs concentrator cell as a function of the doping in the back surface confinement …

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器的输出功率
. 以Zn3As2 为扩散源, 采用闭管扩散方式, 在550℃ 下对650nm 半导体激光器的外延片进行了一 …

AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at
540° C were studied using room-temperature photoluminescence (PL) spectroscopy. As the …

Intermixing in an undoped In Ga As P∕ In P quantum well structure enhanced by near-
surface defects generated using inductively coupled argon plasma is temperature …

A waveguide grating have been designed suitable for Coarse Wavelength Division
Multiplexing applications in which the refractive index is perturbed by the spatial tailoring of …

Silicon oxynitride (SiO x N y) thin films, deposited by electron cyclotron resonance plasma
enhanced chemical vapor deposition, have been used to induce blueshifting of the emission …

Device degradation of GaAs-based AlGaAs/GaInP/GaInAs ridge waveguide (RW) laser
diodes is found to lead to peculiarities in the longitudinal mode spectrum. These features …

The synthesis of high-quality III-V ternary alloy semiconductors is vital to the success of
major technologies such as LEDs, laser diodes, high-efficiency solar cells and power …