We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI).
The asymmetric source-drain structure can effectively suppress the ambipolar switching. The …

In this paper, a novel method is proposed for the extraction of the transistor electrical
parameters at the nanosecond timescale. This technique is enabled by an ultra-fast …

This paper presents a simple and universal measurement method for the average efficiency
and instantaneous efficiency of pulsed RF power amplifiers. The average efficiency of the …

An in-depth understanding of the transient operation of devices at cryogenic temperatures
remains experimentally elusive. However, the impact of these transients has recently …

In this paper, we implement the pulsed current–voltage (PIV) technique for the metal-oxide-
semiconductor field-effect transistor (MOSFET) device's ultrafast characterization based on …