Impact of GaAsN capping on strain and quantum confinement in vertically coupled InAs/GaAs quantum dots
R Gourishetty, S Chakrabarti - Low-Dimensional Materials and …, 2021 - spiedigitallibrary.org
The usage of the capping layer on InAs/GaAs quantum dots (QDs) to improve the optical and
structural characteristics has been a common practice for decades. Especially in vertically …
structural characteristics has been a common practice for decades. Especially in vertically …
Independent control of the excitation and radiation of quantum emitters in MoSe2 monolayer by plasmonic metasurface
Owing to the Purcell effect, optical micro-structures can control the radiative decay of the
quantum emitters in transition metal dichalcogenide (TMDC) media. However, conventional …
quantum emitters in transition metal dichalcogenide (TMDC) media. However, conventional …