A new analytical model for optical and bias dependent nonlinear capacitances of GaAs
MESFET which is valid for both linear and saturation regions has been proposed in this …

This chapter focuses on the simulated optoelectronic circuit which generates a continuous
microwave signal from the incident intensity-modulated optical signal to be fed into a smart …

A semiempirical model of GaN MESFET to evaluate admittance parameters, scattering
parameters, maximum unilateral transducer power gain, and maximum stable gain is …

An analytical study to quantify the substrate parasitic effects on SiGe HBT amplifiers in both
common-base and common-emitter configuration is presented. The power gain relations …

An analytical of new theoretical model has been developed to study the Capacitance
characteristics for an optically controlled Gallium Arsenic Metal Semiconductor Field Effect …

For GaAs MESFET the capacitance of optically controlled short Gate–length modeled
analytically using Gaussian doped channel The photo effects on the short gate-length GaAs …

Due to the high break down fields and low thermal generation rates, wide bandgap
materials such as Gallium nitride have generated increased interest, especially for its …

Résumé L'objectif de ce travail rentre dans le cadre de la modélisation et la simulation
destinée à l'étude des composants optoélectroniques à effet de champ optique à l'arséniure …

An alternative technique that uses a flame-brush at high temperature to enhance UV light
photosensitivity in an optical fiber is described. An extreme low-cost air aspirated propane …

In the present paper, the internal capacitances of optically controlled short gate-length GaAs
MESFETs with vertical Gaussian doped channel region has been modeled analytically. The …