Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …

Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

Avalanche and surge robustness involve fundamental carrier dynamics under high electric
field and current density. They are also prerequisites of any power device to survive …

Previous research has shown that the hybridization of N 2p and O 2p orbitals effectively
suppresses the electrical activity of oxygen vacancies in oxide semiconductors. However …

Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers employing NiO layer extension
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …

Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …

High thermal conductivity electronic materials are critical components for high-performance
electronic and photonic devices as both active functional materials and thermal …

NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages
(VB) of> 8 kV to 600 K. For 100 μm diameter devices, the power figure of merit (VB) 2/RON …

Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …

Efficient, ultrahigh-voltage power-conversion electronics (with voltages> 20 kV) require
semiconductors with an energy gap much larger than that of silicon. The wide-bandgap …