Embedded silicon nanoparticles as enabler of a novel cmos-compatible fully integrated silicon photonics platform

AA González-Fernández, M Aceves-Mijares… - Crystals, 2021 - mdpi.com
The historical bottleneck for truly high scale integrated photonics is the light emitter. The lack
of monolithically integrable light sources increases costs and reduces scalability. Quantum …

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors

Y Berencén, JM Ramírez, O Jambois… - Journal of Applied …, 2012 - pubs.aip.org
The electrical and electroluminescence (EL) properties at room and high temperatures of
oxide/nitride/oxide (ONO)-based light emitting capacitors are studied. The ONO …

Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices

Y Berencén, B Mundet, JA Rodríguez… - Journal of …, 2017 - Elsevier
The combination of a SiO 2 electron accelerator layer with a silicon-rich nitride layer forming
a bilayer embedded in a metal-oxide-semiconductor structure has proved to enhance the …

Focused ion beam polishing based optimization of high-Q silica microdisk resonators

L Eswaramoorthy, P Sharma, B Kumar… - arXiv preprint arXiv …, 2024 - arxiv.org
Whispering gallery mode (WGM) microdisk resonators are promising optical devices that
confine light efficiently and enable enhanced nonlinear optical effects. This work presents a …

[HTML][HTML] Enhancing emission and conduction of light emitting capacitors by multilayered structures of silicon rich oxide

J Alarcón-Salazar, IE Zaldívar-Huerta… - Sensors and Actuators A …, 2017 - Elsevier
This work reports the morphological, electrical and luminescent characteristics of Light
Emitting Capacitors (LECs) composed by Silicon Rich Oxide (SRO) multilayers. These …

DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitors

J Juvert, AAG Fernández… - Journal of lightwave …, 2013 - ieeexplore.ieee.org
We analyze the influence of the fabrication technique and the silicon excess on the power
efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in …

Influence by layer structure on the output EL of CMOS compatible silicon-based light emitters

AA Gonzalez-Fernandez, J Juvert… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Fully combined metal-oxide-semiconductor compatible light-emitting devices based on nano
bi-layer structures are fabricated. The active layers are composed of silicon nitride on top of …

Análisis, diseño, fabricación y caracterización de los elementos básicos para integración de un circuito fotónico totalmente en silicio

DENCCON LA - 2017 - inaoe.repositorioinstitucional.mx
This work studies the monolithic integration on silicon of a light source, an optical waveguide
and a photodetector. The aim is to make a photonic integrated circuit (PIC) using …

The effect of absorption and coherent interference in the photoluminescence and electroluminescence spectra of SRO/SRN MIS capacitors

J Juvert, AA González-Fernández, A Llobera… - Optics express, 2013 - opg.optica.org
In this paper we present a technique that can be used to study the effect of absorption and
coherent interference in the luminescence of multilayer structures. We apply the technique to …

Design and simulation of an optical waveguide for its integration with a light source based on SRO

J Alarcón-Salazar, IE Zaldívar-Huerta… - … and Simulation of …, 2014 - spiedigitallibrary.org
The aim of this paper is to describe the design and simulation of an optical waveguide for its
potential integration with an optical source based on silicon rich oxide (SRO), on a silicon …