Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
Progress in metal-organic chemical vapor deposition of high quality $\left (000\bar {1}\right)
$ N-polar (Al, Ga, In) N films on sapphire, silicon carbide and silicon substrates is reviewed …
$ N-polar (Al, Ga, In) N films on sapphire, silicon carbide and silicon substrates is reviewed …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling
M Malakoutian, DE Field, NJ Hines… - … Applied Materials & …, 2021 - ACS Publications
The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …
power-efficient semiconductor devices, which are only possible with materials that can …
Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs
This paper reports on state-of-the-art millimeter-wave power performance of N-polar GaN-
based metal–insulator–semiconductor high-electron-mobility transistors at 30 and 94 GHz …
based metal–insulator–semiconductor high-electron-mobility transistors at 30 and 94 GHz …
N-polar ScAlN and HEMTs grown by molecular beam epitaxy
Molecular beam epitaxy of single-phase wurtzite N-polar Sc x Al 1− x N (x∼ 0.11–0.38) has
been demonstrated on sapphire substrates by locking its lattice-polarity to the underlying N …
been demonstrated on sapphire substrates by locking its lattice-polarity to the underlying N …
6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates
This letter reports on the W-band power performance of N-polar GaN deep recess MIS-high
electron mobility transistors (HEMTs) using a new atomic layer deposition (ALD) ruthenium …
electron mobility transistors (HEMTs) using a new atomic layer deposition (ALD) ruthenium …
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
The dependence of electron mobility on growth conditions and threading dislocation density
(TDD) was studied for n−-GaN layers grown by ammonia-based molecular beam epitaxy …
(TDD) was studied for n−-GaN layers grown by ammonia-based molecular beam epitaxy …
N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz
A novel N-Polar GaN cap (MIS) high electron mobility transistor demonstrating record 6.7-
W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is …
W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …