We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

This study investigated the impact of the post-deposition annealing (PDA) process on the
material and electrical properties of copper oxide (Cu2O) and nickel oxide (NiO) thin films …

CuAlO 2 thin films were prepared on 4H-SiC and sapphire substrates by sol–gel method
and subsequent annealing process. The influence of annealing temperature from 800° C to …

In this work, nickel oxide (NiO) film was prepared on 4H-SiC (0001) by radio frequency
magnetron sputtering to form NiO/4H-SiC pn heterojunction for the first time. XRD results …

In this letter, a silicon carbide (SiC) thyristor, with an 80-thick p-type blocking base, is
fabricated and triggered by a 365-nm ultraviolet light-emitting diode (UV LED). In the …

This work analytically formulates the relationship among the followings for characterization
purpose:(i) γ E (injection efficiency),(ii) excess charge stored during on-state and (iii) charge …

In this work, CuAlO 2 films were prepared on 4H–SiC (0001) using the sol-gel method. The
surface morphology, structure and optical characteristics of the prepared films were studied …

Современная цивилизация нуждается во все более потребляемых источниках энергии,
чтобы поддерживать прогресс в обществе. Атомная энергия и преобразование …

Copper oxide (Cu2O) is a promising p‐type material owing to its high absorption coefficient,
suitable bandgap width, chemical stability, nontoxicity, and abundance. In this study, the …

To overcome hole-injection limitation of p+–n emitter junction in 4H–SiC light triggered
thyristor, a novel high-voltage 4H–SiC light triggered thyristor with double-deck thin n-base …