This article is a review of recent research and development advances in oxide thin film
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …

An ultrathin, 5 nm, Al 2 O 3 film grown by atomic-layer deposition was used as a gate
dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The …

Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor with an atomic-layer-deposited (ALD)
SiO 2 gate insulator was fabricated under a maximum processing temperature of 250° C and …

We developed a novel method to fabricate Zr-doped ZnO (ZrZnO) thin films via low-
temperature atomic layer deposition technique. ZrZnO films were deposited by diethylzinc …

High-performance nitrogen-doped ZnO (ZnON)-based thin-film transistors (TFTs) were
fabricated by atomic layer deposition (ALD) with a rapid purging time of only 5 s at a …

In this article, we investigated Ytterbium (Yb)-doped Indium-oxide (In2O3)-based thin-film
transistor (TFT) prepared by the solution-processed. Indium-Yb-oxide (InYbO) films with …

Transparent amorphous oxide semiconductor (TAOS) based thin-film transistors (TFTs) are
essential as the backplane for developing advanced flat panel displays. Among many …

In this work, ultrathin AlxOy films used as gate dielectrics in thin-film transistors (TFTs) are
prepared in aqueous and organic electrolytes using an anodization process. A series of …

This report implements for the first time an alkyne-azide “click” chemistry to position
dopamine-specific aptamer receptors on InGaZnO (IGZO) thin film transistor (TFT) surfaces …

Low power consumption is essential for wearable and internet-of-things applications. An
effective way of reducing power consumption is to reduce the operation voltage using a very …