Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques

A Piotrowska, A Guivarc'h, G Pelous - Solid-State Electronics, 1983 - Elsevier
After a brief introduction on the phenomena governing the ohmic contact formation and
measurements in metal—semiconductor structures, we present a review of papers on the …

[图书][B] Laser-beam interactions with materials: physical principles and applications

MV Allmen, A Blatter - 2013 - books.google.com
Laser-Beam Interactions with Materials treats, from a physicist's point of view, the wide
variety of processes that lasers can induce in materials. Physical phenomena ranging from …

[图书][B] Ion implantation and beam processing

JS Williams, JM Poate - 2014 - books.google.com
Ion Implantation and Beam Processing covers the scientific and technological advances in
the fields of ion implantation and beam processing. The book discusses the amorphization …

Transient annealing of semiconductors by laser, electron beam and radiant heating techniques

AG Cullis - Reports on Progress in Physics, 1985 - iopscience.iop.org
The annealing of semiconductors is of critical importance for successful electronic device
fabrication. The present review surveys the new field of transient annealing and covers all …

Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

S Zhou - Journal of Physics D: Applied Physics, 2015 - iopscience.iop.org
Combining semiconducting and ferromagnetic properties, dilute ferromagnetic
semiconductors (DFS) have been under intensive investigation for more than two decades …

Laser processing of silicon

IW Boyd, JIB Wilson - Nature, 1983 - nature.com
The application of laser radiation to the processing of silicon and silicon-based solid state
devices has developed in the past two decades. A few of these techniques are becoming …

Electrical transport and ferromagnetism in Ga1− xMnxAs synthesized by ion implantation and pulsed-laser melting

MA Scarpulla, R Farshchi, PR Stone… - Journal of Applied …, 2008 - pubs.aip.org
We present a detailed investigation of the magnetic and magnetotransport properties of thin
films of ferromagnetic Ga 1− x Mn x As synthesized using ion implantation and pulsed-laser …

Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs

T Kim, MR Pillai, MJ Aziz, MA Scarpulla… - Journal of Applied …, 2010 - pubs.aip.org
In order to further understand the pulsed-laser melting (PLM) of Mn and N implanted GaAs,
which we have used to synthesize thin films of the ferromagnetic semiconductor Ga 1− x Mn …

Laser processing of semiconductors: An overview

RF Wood, CW White, RT Young - Semiconductors and Semimetals, 1984 - Elsevier
Publisher Summary This chapter provides a combined introductory overview and historical
survey of the development of laser processing of semiconductors. It focuses on various types …

Nonalloyed Ohmic contacts to n‐GaAs by pulse‐electron‐beam‐annealed selenium implants

RL Mozzi, W Fabian, FJ Piekarski - Applied Physics Letters, 1979 - pubs.aip.org
Degradation of Ohmic contact layers on n-type GaAs is known to be a common cause of
device failure, particularly at the elevated temperatures and high current densities …