An experimental study on determination of the shottky diode current-voltage characteristic depending on temperature with artificial neural network
Shottky diodes are one of the important components of electronic systems. Therefore, it is
very important to determine the parameters of the diodes according to the area in which they …
very important to determine the parameters of the diodes according to the area in which they …
Electronic transport in epitaxial 4H–SiC based Schottky diodes modified selectively by swift heavy ions
V Kumar, AS Maan, J Akhtar - Materials Science in Semiconductor …, 2020 - Elsevier
Modifications in the defects and electronic transport properties of epitaxial 4H-nSiC (0001)
Schottky barrier diodes have been carried out by selective 200 MeV Ag+ 14 ions irradiation …
Schottky barrier diodes have been carried out by selective 200 MeV Ag+ 14 ions irradiation …
Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts
Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Schottky Mo/4H-SiC
diodes have been measured and analyzed as a function of temperature between 80 and …
diodes have been measured and analyzed as a function of temperature between 80 and …
Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide
VE Gora, A Chawanda, C Nyamhere, FD Auret… - Physica B: Condensed …, 2018 - Elsevier
We have investigated the current-voltage (IV) characteristics of nickel (Ni), cobalt (Co),
tungsten (W) and palladium (Pd) Schottky contacts on n-type 4 H-SiC in the 300–800 K …
tungsten (W) and palladium (Pd) Schottky contacts on n-type 4 H-SiC in the 300–800 K …
Defects in swift heavy ion irradiated n-4H-SiC
We have used confocal Raman spectroscopy, atomic force microscopy (AFM), Binary
collision approximations and Deep level transient spectroscopy (DLTS) to study the defects …
collision approximations and Deep level transient spectroscopy (DLTS) to study the defects …
DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC
In this study, nitrogen-doped 4 H-SiC samples were bombarded with 167 MeV xenon ions to
a fluence of 1× 108 cm− 2 at 300 K prior to the fabrication of Schottky barrier diodes. The …
a fluence of 1× 108 cm− 2 at 300 K prior to the fabrication of Schottky barrier diodes. The …
Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation
Y Li, M Gong, M Huang, Y Ma, Z Yang - Materials Science in Semiconductor …, 2024 - Elsevier
The impact of gamma irradiation and subsequent recovery at room temperature on the
device performance of commercial 4H–SiC Schottky barrier diodes (SBDs) was investigated …
device performance of commercial 4H–SiC Schottky barrier diodes (SBDs) was investigated …
Heavy ion radiation and temperature effects on SiC schottky barrier diode
D Wang, R Hu, G Chen, C Tang, Y Ma, M Gong… - Nuclear Instruments and …, 2021 - Elsevier
The function of a commercial Schottky Barrier Diode (SBD) based on 4H-SiC in an
environment of extreme temperature and radiation was assessed. The capacitance-voltage …
environment of extreme temperature and radiation was assessed. The capacitance-voltage …
Electrical characterization and temperature reliability of 4H-SiC Schottky barrier diodes after Electron radiation
M Xiang, D Wang, M He, G Rui, Y Ma, X Zhu… - Microelectronics …, 2023 - Elsevier
In this study, the operation of commercial SBD-based on 4H-SiC after radiation was
assessed. The devices were subjected to electron radiation with an energy of 1.7 MeV at …
assessed. The devices were subjected to electron radiation with an energy of 1.7 MeV at …
Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs
We have used deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) to
characterize the electrically active point defects introduced in n-type gallium arsenide by …
characterize the electrically active point defects introduced in n-type gallium arsenide by …