Impact of channel parameters on threshold voltage at variable temperatures of Double-gate CNTFET
A Lakhanpal, KS Sandha - Micro and Nanostructures, 2022 - Elsevier
This paper focuses mainly on the effect of various channel parameters like chirality, diameter
of CNT, high-k dielectric materials and oxide layer thickness of DG-CNTFET on the threshold …
of CNT, high-k dielectric materials and oxide layer thickness of DG-CNTFET on the threshold …
Formation of Globally Uniaxial Strain in He+ Implanted Silicon-on-Insulator Wafers Based on the Size Effect of Internal Stress of Strip SiN Films
H Xu, Y Jing, D Miao, Y Guo, J Han, L Wang, J Song… - Silicon, 2024 - Springer
In this paper, we proposed a method of introducing globally uniaxial strain into SOI (silicon-
on-insulator) wafers, and the strain mechanism was discussed. Based on the size effect of …
on-insulator) wafers, and the strain mechanism was discussed. Based on the size effect of …
Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films
Y Jing, H Xu, D Miao, Y Guo, J Han, L Wang, J Song… - Silicon, 2024 - Springer
To study the effect of various parameters of wafer-level strained SOI on the stress of the top
Si layer, strained-SOI wafers were successfully fabricated by depositing highly stressed SiN …
Si layer, strained-SOI wafers were successfully fabricated by depositing highly stressed SiN …