In this work, we investigate the electronic properties and thermoelectric performance of
triangulene π-dimer junctions with the twist angle from 0 to 60 by using first-principles …

Gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) have attracted
significant research attention because of their high-power and high-frequency electronics …

We use a data-driven approach to study the magnetic and thermodynamic properties of van
der Waals (vdW) layered materials. We investigate monolayers of the form A 2 B 2 X 6 …

Reasonably regulating electronic coupling to promote charge transfer and exciton
separation has been regarded a promising approach in catalysis. The material engineering …

Half-metals have been envisioned as active components in spintronic devices by virtue of
their completely spin-polarized electrical currents. Actual materials hosting half-metallic …

Since the first isolation of graphene from graphite in 2004, atomically thin or layered
materials have been occupying the central stage of today's condensed matter physics and …

The graphene/MoS 2 heterojunction formed by joining the two components laterally in a
single plane promises to exhibit a low-resistance contact according to the Schottky–Mott …

We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag
graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto …

Two-dimensional materials are promising for use in atomically thin electronics,
optoelectronics and flexible electronics because of their versatile band structures, optical …

Single-layer half-metal magnets offer exciting scope in spin electronic quantum applications
owing to improved spin transport, reduced interfacial resistance and streamlined device …