Two-dimensional materials prospects for non-volatile spintronic memories
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …
Almost perfect spin filtering in graphene-based magnetic tunnel junctions
We report on large spin-filtering effects in epitaxial graphene-based spin valves, strongly
enhanced in our specific multilayer case. Our results were obtained by the effective …
enhanced in our specific multilayer case. Our results were obtained by the effective …
Designing van der Waals magnetic tunnel junctions with high tunnel magnetoresistance via Brillouin zone filtering
Magnetic tunnel junctions (MTJs) consisting of two-dimensional (2D) van der Waals
heterostructures have no inter-layer chemical bonds; therefore, their spin tunneling is …
heterostructures have no inter-layer chemical bonds; therefore, their spin tunneling is …
Twist pz Orbital and Spin Moment of the Wavy-Graphene/L10-FePd Moiré Interface
H Naganuma, M Uemoto, H Adachi… - The Journal of …, 2023 - ACS Publications
A crystallographically heterogeneous moiré interface of hexagonal graphene (Gr) and a
tetragonal L 10-FePd alloy is bonded via van der Waals (vdW) forces. Robust interfacial …
tetragonal L 10-FePd alloy is bonded via van der Waals (vdW) forces. Robust interfacial …
[HTML][HTML] L10 FePd-based perpendicular magnetic tunnel junctions with 65% tunnel magnetoresistance and ultralow switching current density
L1 0 FePd is increasingly recognized as a potential candidate for magnetic tunnel junctions
(MTJs), yet there remains room for enhancing device performance. In this work, we …
(MTJs), yet there remains room for enhancing device performance. In this work, we …
Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory
ABSTRACT A body-centered cubic (bcc) FeCo (B) is a current standard magnetic material
for perpendicular magnetic tunnel junctions (p-MTJs) showing both large tunnel …
for perpendicular magnetic tunnel junctions (p-MTJs) showing both large tunnel …
Spintronics memory using magnetic tunnel junction for X nm-generation
H Naganuma - Japanese Journal of Applied Physics, 2023 - iopscience.iop.org
The feasibility of X nm-generation scaling with magnetic tunnel junctions (MTJs) in spintronic
memory is aimed at keeping up with state-of-the-art transistor scaling. Magnetocrystalline …
memory is aimed at keeping up with state-of-the-art transistor scaling. Magnetocrystalline …
Comparing h-BN and MgO tunnel barriers for scaled magnetic tunnel junctions
Magnetic tunnel junctions (MTJ) with MgO/Fe based interfaces and perpendicular spin
directions form the basis of present-day spin-transfer torque magnetic random-access …
directions form the basis of present-day spin-transfer torque magnetic random-access …
Sputtered L10‐FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics
As a promising alternative to the mainstream CoFeB/MgO system with interfacial
perpendicular magnetic anisotropy (PMA), L10‐FePd and its synthetic antiferromagnet …
perpendicular magnetic anisotropy (PMA), L10‐FePd and its synthetic antiferromagnet …
[HTML][HTML] Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation
The influence of the sidewall damage on the thermal stability factor (Δ) of quad-interface
magnetic tunnel junctions (quad-MTJs) was investigated through a string method-based …
magnetic tunnel junctions (quad-MTJs) was investigated through a string method-based …