A review of resistive switching devices: performance improvement, characterization, and applications
As human society enters the big data era, huge data storage and energy‐efficient data
processing are in great demand. The resistive switching device is an emerging device with …
processing are in great demand. The resistive switching device is an emerging device with …
Binary metal oxide-based resistive switching memory devices: A status review
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Verification and mitigation of ion migration in perovskite solar cells
Metal halide perovskite materials have shown versatile functionality for a variety of
optoelectronic devices. Remarkable progress in device performance has been achieved for …
optoelectronic devices. Remarkable progress in device performance has been achieved for …
Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era
Growth of data eases the way to access the world but requires increasing amounts of energy
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary
metal–oxide–semiconductor-compatible materials (hafnium oxide, aluminum oxide, and …
metal–oxide–semiconductor-compatible materials (hafnium oxide, aluminum oxide, and …
A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing
With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …
insufficient owing to its high latency and energy consumption that originate from its …
Recent advances in synaptic nonvolatile memory devices and compensating architectural and algorithmic methods toward fully integrated neuromorphic chips
Nonvolatile memory (NVM)‐based neuromorphic computing has been attracting
considerable attention from academia and the industry. Although it is not completely …
considerable attention from academia and the industry. Although it is not completely …
GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides
First-principles calculation has become an indispensable methodology in revealing the
working principles of nanoscale electronic devices, but ultra-large supercells are usually …
working principles of nanoscale electronic devices, but ultra-large supercells are usually …
Uniform and robust TiN/HfO2/Pt memristor through interfacial Al-doping engineering
Doping and interface engineering are important schemes to address the variation problem
which hinders the application of memristors. In this study, combination of doping and …
which hinders the application of memristors. In this study, combination of doping and …
Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process
CF Liu, XG Tang, LQ Wang, H Tang, YP Jiang, QX Liu… - Nanomaterials, 2019 - mdpi.com
The resistive switching (RS) characteristics of flexible films deposited on mica substrates
have rarely been reported upon, especially flexible HfO2 films. A novel flexible …
have rarely been reported upon, especially flexible HfO2 films. A novel flexible …