Cathodoluminescence (CL) is a powerful tool for the investigation of optical properties of
materials. In recent years, its combination with scanning transmission electron microscopy …

The suitability of type IIa diamonds prepared by High Pressure High Temperature (HPHT) in
cubic presses at New Diamond Technology was assessed as substrates for the growth of …

Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different
properties. Their combination in graphene-based devices is now of intense research focus …

Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They
exhibited smooth surface morphologies and a crystalline quality comparable to (100) …

Type IIb diamonds are those that contain more boron than nitrogen. The presence of this
uncompensated boron gives rise to absorption in the infrared part of the electromagnetic …

The development of diamond power electronic devices based on p–n junctions strongly
relies on the ability to achieve efficient n-type doping which has so far been the limiting …

We evaluated the current–voltage (IV) and temperature-dependent IV characteristics of n+-
Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding …

Aluminum nitride (AlN) layers doped intentionally with different concentrations of silicon
atoms acting as shallow donors were grown by MOVPE on bulk c‐plane AlN to minimize …

Homoepitaxial boron‐doped diamond layers grown by chemical vapor deposition on (100)‐
oriented substrates are studied by Hall effect and resistivity measurements as a function of …

Boron doped diamond layers have been grown on (110) single crystal diamond substrates
with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed …