[图书][B] Molecular beam epitaxy: fundamentals and current status

MA Herman, H Sitter - 2012 - books.google.com
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

Excitonic and nonlinear-optical properties of dielectric quantum-well structures

M Kumagai, T Takagahara - Physical Review B, 1989 - APS
Excitonic and nonlinear-optical properties of dielectric quantum-well (DQW) structures are
investigated theoretically. A DQW is a quantum well sandwiched by barrier materials with a …

Growth and characterization of single crystal insulators on silicon

LJ Schowalter, RW Fathauer - Critical Reviews in Solid State and …, 1989 - Taylor & Francis
Epitaxial insulators have a number of potential applications in the semiconductor industry.
These include semiconductor-on-insulator (SOI) structures, three-dimensional (3-D) and/or …

Rapid isothermal processing

R Singh - Journal of Applied Physics, 1988 - pubs.aip.org
The physics and technology of a relatively new, short‐time, thermal processing technique,
namely rapid isothermal processing (RIP), based on incoherent sources of light for the …

Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepitaxial structure research: A review

S Sinharoy - Thin Solid Films, 1990 - Elsevier
Epitaxial fluorides have attracted attention in recent years because of the many potential
microelectronic and optoelectronic device applications of semiconductor/epitaxial …

Creation of Nanohillocks on Surfaces by Single Slow Highly Charged Ions

AS El-Said, R Heller, W Meissl, R Ritter, S Facsko… - Physical review …, 2008 - APS
Upon impact on a solid surface, the potential energy stored in slow highly charged ions is
primarily deposited into the electronic system of the target. By decelerating the projectile …

Calcium fluoride as high-k dielectric for 2D electronics

C Wen, M Lanza - Applied Physics Reviews, 2021 - pubs.aip.org
Calcium fluoride is a dielectric material with a wide bandgap ($12.1 eV) and a relatively high
dielectric constant ($6.8) that forms a van der Waals interface with two-dimensional (2D) …

Electronic structure of the /Si(111) interface

D Rieger, FJ Himpsel, UO Karlsson, FR McFeely… - Physical Review B, 1986 - APS
High-resolution core-level and Auger-electron spectroscopy, polarization-dependent near-
edge x-ray absorption, and angle-resolved photoemission are used to study the electronic …

[图书][B] Internal photoemission spectroscopy: principles and applications

VV Afanas' ev - 2010 - books.google.com
The monographic book addresses the basics of the charge carrier photoemission from one
solid to another-the internal photoemission,(IPE)-and different spectroscopic applications of …

Electronic transitions at the /Si(111) interface probed by resonant three-wave mixing spectroscopy

TF Heinz, FJ Himpsel, E Palange, E Burstein - Physical review letters, 1989 - APS
Resonant optical second-harmonic and sum-frequency generation are applied to probe
electronic transitions at the Ca-terminated epi-taxial CaF 2/Si (111) interface. A band gap of …