Etch and growth rates of GaN for surface orientations in the< 0001> crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton

X Guo, MA Gosalvez, Y Xing, Y Chen - Materials Science in Semiconductor …, 2023 - Elsevier
Compared to other methods, we present the benefits of the Continuous Cellular Automaton
(CCA) to describe in a simple and flexible manner anisotropic wet chemical etching of GaN …

Tin oxide nanosensors for highly sensitive toxic gas detection and their 3D system integration

C Griessler, E Brunet, T Maier, S Steinhauer… - Microelectronic …, 2011 - Elsevier
We present nanosensors based on ultrathin SnO2 films, which are very sensitive to the
highly toxic gases SO2 and H2S. The SnO2-sensing films are fabricated by a spray pyrolysis …

Evaluation and selection of materials for particulate matter MEMS sensors by using hybrid MCDM methods

CY Huang, PH Chung, JZ Shyu, YH Ho, CH Wu… - Sustainability, 2018 - mdpi.com
Air pollution poses serious problems as global industrialization continues to thrive. Since air
pollution has grave impacts on human health, industry experts are starting to fathom how to …

Analytical and numerical modelling of AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

S Vittoz, L Rufer, G Rehder, U Heinle… - Sensors and Actuators A …, 2011 - Elsevier
Some industrial areas as oil, automotive and aerospace industries, require
electromechanical systems working in harsh environments. An elegant solution is to use III …

Analytical and numerical modeling of AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

S Vittoz, L Rufer, G Rehder, U Heinle, P Benkart - Procedia Engineering, 2010 - Elsevier
Some industrial areas require functioning electronics in harsh environments. A solution is to
use III-V materials alloys having semiconductor, piezoelectric and pyroelectric properties …

[PDF][PDF] GaN-on-Si pressure, flow, and thermal conductivity sensors for harsh environments

GR Jones - 2021 - wrap.warwick.ac.uk
Sensors are fundamental for providing the interface that gives insight into the physical
phenomena that occurs in the real world. As modern data processing has grown, and with …

[PDF][PDF] AlGaN/GaN HEMT pre senzorické aplikácie

G Vanko - 2009 - elu.sav.sk
Tranzistory s vysokou pohyblivosťou elektrónov (ďalej len HEMT-y) na báze materiálového
systému AlGaN/GaN sú vhodnými kandidátmi pre mikrovlnné aplikácie so širokým …

Study of built-in stress distribution in AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

S Vittoz, L Rufer, G Rehder, R Srnanek… - 2011 4th IEEE …, 2011 - ieeexplore.ieee.org
Some industrial areas as oil, automotive and aerospace industries, require
electromechanical systems working in harsh environments. A solution is to use III-V …

[PDF][PDF] Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures AlGaN/GaN pour les environnements hostiles

MS BASROUR, MI DUFOUR, MC BOWEN, ML RUFER - 2011 - theses.hal.science
Ma reconnaissance va également à Monsieur Skandar BASROUR, dont les remarques et
les conseils m'auront permis de garder une vue d'ensemble sur mes travaux au cours des …

[PDF][PDF] Modélisation et caractérisation de capteurs mécaniques à base d'hétérostructures AlGaN/GaN pour environnements en conditions sévères

S VITTOZ, L Rufer - … Journées Nationales du Réseau Doctoral en …, 2010 - researchgate.net
Résumé Certains domaines d'applications tels que l'aérospatial, l'automobile ou le forage
de haute profondeur peuvent nécessiter la visualisation de certains paramètres physiques …