Micro light‐emitting diode (Micro‐LED) display is an emerging display technology thanks to
its high brightness, fast switching speed, and low power consumption. The …

Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of
group III-nitrides on thermally active substrates at low temperature. The precursors …

(In, Ga) N light-emitting diodes (LEDs) fabricated on a sapphire growth substrate were
successfully integrated onto Si substrates by a double-transfer technique using excimer …

A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates,
such as sapphire. Semiconductor layers are produced on the insulating substrate using …

The fabrication process and performance characteristics of a vertical-structured GaN-based
light-emitting diode (VM-LED) employing nickel electroplating and patterned laser liftoff …

We fabricate flexible GaN-based light-emitting diode (LED) systems by laser lift-off (LLO)
and transfer printing methods. LLO enables transferring a whole GaN LED layer from …

A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates,
such as sapphire. Semiconductor layers are produced on the insulating substrate using …

We report on the vertically stacked color tunable light-emitting diodes (LEDs) fabricated
using wafer bonding with an indium tin oxide (ITO) layer and transfer printing by the laser lift …

Laser lift-off technique was employed to carry out transfer of prefabricated InGaN multiple-
quantum-well light-emitting diodes (LEDs) from sapphire onto Cu substrate. Silver epoxy …

A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates,
such as sapphire. Semiconductor layers are produced on the insulating substrate using …