Ferroelectric YAlN grown by molecular beam epitaxy
We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride
semiconductors. In this study, single-crystalline, wurtzite Y 0.07 Al 0.93 N films were …
semiconductors. In this study, single-crystalline, wurtzite Y 0.07 Al 0.93 N films were …
Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors
Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications
Wurtzite ferroelectrics are an emerging material class that expands the functionality and
application space of wide bandgap semiconductors. Promising physical properties of binary …
application space of wide bandgap semiconductors. Promising physical properties of binary …
Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures
Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …
Voltage-margin limiting mechanisms of AlScN-based HEMTs
In this work, the off-state characteristics of AlScN/GaN high electron mobility transistors
(HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and …
(HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and …
Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric
In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs)
with a sputtered AlScN gate dielectric, exhibiting a large memory window of~ 14.6 V and a …
with a sputtered AlScN gate dielectric, exhibiting a large memory window of~ 14.6 V and a …
Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers
Ultrawide bandgap ferroelectric nitride semiconductors have shown promising applications
in electronic, micromechanical, and optical devices. Current studies, however, have largely …
in electronic, micromechanical, and optical devices. Current studies, however, have largely …
High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al1‐xScxN Thin Films
Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics
because they can be easily integrated with mainstream semiconductor technology. Sc …
because they can be easily integrated with mainstream semiconductor technology. Sc …
Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N
N Wolff, G Schönweger, I Streicher… - Advanced Physics …, 2024 - Wiley Online Library
Wurtzite‐type Al1− xScxN solid solutions grown by metal organic chemical vapor deposition
are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x= 0.15 …
are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x= 0.15 …