Integrated intelligent electromagnetic radiator design for future THz communication: A review

X LU, S Venkatesh, H Saeidi… - Chinese Journal of …, 2022 - Wiley Online Library
Advances in 6G communication changes how machines and humans interact. The blossom
of new applications demands significantly higher data bandwidth while preserving the …

A 17 Gb/s 10.7 pJ/b 4FSK transceiver system for point to point communication in 65 nm CMOS

H Afzal, C Li, O Momeni - 2022 IEEE Radio Frequency …, 2022 - ieeexplore.ieee.org
This paper presents a novel 145–185 GHz transceiver (TRX) with 4 frequency-shift keying
(4FSK) modulation. The proposed non-coherent 4FSK design removes the need for …

A highly efficient 165-GHz 4FSK 17-Gb/s transceiver system with frequency overlapping architecture in 65-nm CMOS

H Afzal, C Li, O Momeni - IEEE Journal of Solid-State Circuits, 2023 - ieeexplore.ieee.org
A new four-frequency-shift keying (4FSK) transceiver (TRX) at 145–185-GHz operation
frequency is presented. The proposed non-coherent TRX is a fully integrated bit-in–bit-out …

High-efficiency 200-GHz neutralized common-base power amplifiers in 250-nm InP HBT

JSC Chien, W Lee, JF Buckwalter - IEEE Journal of …, 2023 - ieeexplore.ieee.org
The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction
bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record …

-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized -Core and Transmission Line-Based Zero-Degree Power Combining Networks

B Yun, DW Park, SG Lee - IEEE Journal of Solid-State Circuits, 2023 - ieeexplore.ieee.org
This article proposes high-gain, high-output-power, and high-power-added efficiency (PAE)
power amplifiers (PAs) by adopting an output power maximized (OPM) maximum achievable …

[HTML][HTML] Solid-State Terahertz Circuits and Communication Systems for 6G: A Review

Z Niu, B Zhang, Y Zhang, Y Feng, Z Chen… - Chinese Journal of …, 2024 - cje.ejournal.org.cn
Zhongqian Niu Member, IEEE, was born in Luoyang, Henan, China, in 1991. He received
the BE and Ph. D. degrees in electronic science and technology from the University of …

A 200-GHz Power Amplifier With 18.7-dBm in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification

S Hassanzadehyamchi, A Alizadeh… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
This article proposes a novel approach on cascaded series-connected power amplifier (PA)
design. High-frequency transistor modeling is employed to analyze the stacked cell, and a …

A D-band differential amplifier with cross-couple of series-connected capacitor and transmission line-based dual-frequency Gmax-core

HR Jeon, DW Park, SG Lee - IEEE Transactions on Circuits and …, 2024 - ieeexplore.ieee.org
This paper presents a novel wideband and high-gain amplifier that utilizes a differential dual-
frequency Gmax-core with a cross-coupled network incorporating a capacitor and a …

A novel gain‐boosting structure with Z‐embedding and parallel pre‐embedding network for amplifiers at near‐fmax frequencies

F He, Q Xie, Z Wang - International Journal of Circuit Theory …, 2023 - Wiley Online Library
In this paper, a novel gain‐boosting structure with Z‐embedding and parallel pre‐
embedding network (Z/pre‐Y‐embedding) is proposed to improve the power gain of …

Analysis and Design of a Novel Gain-Boosting Technique Based on Lossy Series Embedding Network for Near- Embedded Amplifier

F He, Q Xie, Z Wang - … Transactions on Circuits and Systems I …, 2023 - ieeexplore.ieee.org
This paper presents a novel gain-boosted structure to improve the power gain of near-
amplifier, achieving a 185-GHz two-stage single-ended amplifier with a power gain of 6.85 …