Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast
switches, and multivalued logic (MVL) devices, which hold promising potential for next …

Low dimensional materials are promising candidates for the construction of electronic and
optoelectronic devices owing to their novel electronic structure and exciting physiochemical …

Abstract Two-dimensional (2D) semiconductors are promising in channel length scaling of
field-effect transistors (FETs) due to their excellent gate electrostatics. However, scaling of …

Antiambipolar heterojunctions are regarded as a revolutionary technology in the fields of
electronics and optoelectronics, enabling the switch between positive and negative …

Quantum mechanical band-to-band tunneling is a type of carrier injection mechanism that is
responsible for the electronic transport in devices like tunnel field effect transistors (TFETs) …

The unique and exceptional properties of two-dimensional (2D) materials have opened
unprecedented opportunities for exploring novel 2D phenomena for optoelectronic …

We report the fabrication process and performance characterization of a fully integrated
ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the …

The ability to determine the precise structure of nano-objects is essential for a multitude of
applications. This is particularly true of single-walled carbon nanotubes (SWCNTs), which …

The dangling‐bond‐free surfaces of 2D materials enable them to possess various degrees
of freedom to form heterostructures with non‐2D materials. This allows for the combination of …

Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based
metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this …