In this letter, a third-order low Insertion loss bandpass filter (BPF) is proposed by using a
stacked double-layer structure through the technologies of the glass-based integrated …

In this article, a highly miniaturized absorptive bandpass filter based on a novel topology is
presented. The filter topology utilizes a resistor-loaded network to achieve absorptive …

The wideband GaAs-based integrated passive device (IPD) filter with high selectivity and
reduced size is proposed by utilizing single through via (TV) inductive coupling. One series …

The paper proposes a miniaturized bandpass filter (BPF) using gallium arsenide (GaAs)‐
based integrated passive device (IPD) technology. The proposed filter is evolved from …

This paper outlines the development of a bandpass filter (BPF) suited for 5G
communications in the n77 and n78 bands. We apply a thin-film integrated passive device …

In this letter, a miniaturized bandpass filter chip is designed and implemented on high-
resistivity-silicon (HRS) integrated passive device (IPD) technology. The filter is designed …

A miniaturized 4th order on-chip bandpass filter (BPF) with high selectivity and improved in-
band flatness is proposed in this paper. It consists of two pairs of transformer-type resonators …

This work proposes a microwave resonator built from gallium arsenide using integrated
passive device (IPD) technology. It consists of a three-layered interlaced spiral structure with …

A novel on-chip bandpass filter (BPF) design with controllable transmission zeros (TZs) for
high out-of-band rejection is proposed using the hybrid coupling technique. The proposed …

In this article, based on the integrated passive device (IPD) technology with GaAs substrate,
an elliptical bandpass filter (BPF) is proposed with a reasonable and compact layout. Within …