There is renewed emphasis on development of robust solid-state sensors capable of
uncooled operation in harsh environments. The sensors should be capable of detecting …

This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

An advantage for some wide bandgap materials, that is often overlooked, is that the thermal
coefficient of expansion (CTE) is better matched to the ceramics in use for packaging …

A recessed-gate structure has been studied with a view to realizing normally off operation of
high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics …

AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage
are fabricated and demonstrated as switching power devices for motor drive and power …

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical
vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD …

The breakdown voltages in unpassivated nonfield-plated AlGaN/GaN HFETs on sapphire
substrates were studied. These studies reveal that the breakdown is limited by the surface …

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and
integrated magnetic sensors that can be used to create ultra-low power, high speed …

The theoretical limit of a lateral wide band-gap semiconductor (WBS) power device was
estimated for SiC, GaN and diamond. The lateral WBS device realizes ultra-low on …

We demonstrated that Sc2O3 thin films deposited by plasma-assisted molecular-beam
epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on …