This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …

The layered van der Waals antiferromagnet MnBi 2 Te 4 has been predicted to combine the
band ordering of archetypical topological insulators such as Bi 2 Te 3 with the magnetism of …

Angle-resolved photoemission spectroscopy (ARPES) is a well-established experimental
technique that allows probing of the electronic structure of quantum materials using …

In this paper, we employ electronic structure theory to investigate the nature of the exchange
coupling in transition metal doped Bi 2 Se 3. We focus on V, Cr, Mn, and Fe, which have …

The main objective of the review was to investigate the ferromagnetism of diluted magnetic
semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has …

The high-spectral-resolution optical studies of the energy gap evolution, supplemented with
electronic, magnetic, and structural characterization, show that the modification of the GaAs …

The dilute magnetic semiconductors have promise in spin-based electronics applications
due to their potential for ferromagnetic order at room temperature, and various unique …

Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor,(Ga, Mn) As,
offers a great opportunity to observe novel spin-related phenomena as well as to …

The impact of incorporating Bi into (Ga, Mn) As layers on their electronic, band structure,
magnetic, and structural properties has been studied. The low-temperature molecular beam …