Recent developments in Terahertz wave detectors for next generation high speed Terahertz wireless communication Systems: A review
J Ajayan - Infrared Physics & Technology, 2024 - Elsevier
Terahertz (THz) devices have been the subject of ongoing study as a fundamental
technology for a wide range of industrial applications, including imaging, spectroscopy, and …
technology for a wide range of industrial applications, including imaging, spectroscopy, and …
Room temperature direct and heterodyne detection of 0.28–0.69-THz waves based on GaN 2-DEG unipolar nanochannels
C Daher, J Torres, I Iñiguez-De-La-Torre… - … on Electron Devices, 2015 - ieeexplore.ieee.org
An experimental demonstration of GaN-based asymmetric nanodiodes as direct and
heterodyne detectors up to 0.69 THz has been performed at room temperature …
heterodyne detectors up to 0.69 THz has been performed at room temperature …
GaN nanodiode arrays with improved design for zero-bias sub-THz detection
H Sánchez-Martín, S Sánchez-Martín… - Semiconductor …, 2018 - iopscience.iop.org
GaN based self-switching diodes (SSDs) have been fabricated for the first time on SiC
substrate. They have been characterized as RF power detectors in a wide frequency range …
substrate. They have been characterized as RF power detectors in a wide frequency range …
A mixer architecture using GaN-based split-gate nanowire transistor
Frequency mixer is an essential block in radio-frequency signal processing for frequency
translation and phase comparison. The most common mixers are fabricated using passive …
translation and phase comparison. The most common mixers are fabricated using passive …
[PDF][PDF] 室温微测辐射热计太赫兹探测阵列技术研究进展(特邀)
王军， 蒋亚东 - 红外与激光工程, 2019 - researching.cn
摘要院在室温太赫兹探测技术领域中, 热敏微桥结构的太赫兹探测器具有探测波段宽,
阵列规模大, 集成度高, 实时成像等显著特点. 文中对室温太赫兹探测技术 …
阵列规模大, 集成度高, 实时成像等显著特点. 文中对室温太赫兹探测技术 …
Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
E Pérez-Martín, I Íñiguez-De-La-Torre… - Journal of Applied …, 2021 - pubs.aip.org
In this paper, the occupancy of sidewall surface states having a clear signature in the
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …
Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes
B Orfao, BG Vasallo, D Moro-Melgar… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, by means of a 2-D ensemble Monte Carlo simulator, the Schottky barrier
diodes (SBDs) with realistic geometries based on GaAs and GaN are studied as promising …
diodes (SBDs) with realistic geometries based on GaAs and GaN are studied as promising …
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
The influence of passivation on the edge effects (EEs) present in the capacitance-voltage
(CV) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is …
(CV) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is …
Comprehensive characterization of Gunn oscillations in In0. 53Ga0. 47As planar diodes
Y Lechaux, I Ìñiguez-de-la-Torre… - Semiconductor …, 2020 - iopscience.iop.org
Abstract In this work, In 0.53 Ga 0.47 As planar Gunn diodes specifically designed for
providing oscillations at frequencies below 30 GHz have been fabricated and characterized …
providing oscillations at frequencies below 30 GHz have been fabricated and characterized …
Geometry and bias dependence of trapping effects in planar GaN nanodiodes
H Sánchez-Martín, O García-Pérez… - … on Electron Devices …, 2017 - ieeexplore.ieee.org
Pulsed and transient measurements performed in planar nanodiodes fabricated on an
AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the IV …
AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the IV …