Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

Recent progress and current understanding of carrier lifetimes and avalanche phenomena
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …

The development of a method for calculating the frequency-dependent second harmonic
generation coefficient of insulators and semiconductors based on the self-consistent …

Since the 1997 publication of" Silicon Carbide-A Review of Fundamental Questions and
Applications to Current Device Technology" edited by Choyke, et al., there has been …

SiC materials are currently metamorphosing from research and development into a market
driven manufacturing product. SiC substrates are currently used as the base for a large …

Silicon carbide (SiC) is a wide bandgap (WBG) semiconductor with promising applications
in high-power and high-frequency electronics. Among its many useful properties, the high …

Results of ab initio calculations are reported for hexagonal polytypes of C, Si, and Ge in
equilibrium and under hydrostatic pressure. For each polytype 2 H, 3 C, 4 H, and 6 H, the …

WIDE BANDGAP semiconductor, particularly Silicon Carbide (SiC), based electronic
devices and circuits are presently being developed for use in high-temperature, high-power …

4H–SiC samples doped with nitrogen at∼ 3× 10 19 cm− 3 were annealed in Ar for 90 min at
1150° C. Transmission electron microscopy revealed stacking faults at a density of …

In situ X-ray crystallography powder diffraction studies on beta silicon carbide (3C-SiC) in
the temperature range 25–800° C at the maximum peak (111) are reported. At 25° C, it was …