(57) ABSTRACT A semiconductor light emitting device has a device body made of a group III
nitride semiconductor having a major Surface defined by a nonpolar plane. In the device …

A nitride semiconductor device is provided that prevents development of cracks, that has
nitride semiconductor thin films with uniform thicknesses and good growth surface flatness …

(57) ABSTRACT A nitride semiconductor laser device uses a substrate with low defect
density, contains reduced strains inside a nitride semiconductor film, and thus offers a …

On a processed substrate having an engraved region as a depressed portion formed
thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride …

(57) ABSTRACT A nitride semiconductor light-emitting chip offers enhanced luminous
efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip …

Provided is a method for fabricating a nitride semiconductor light-emitting device including a
nitride semiconductor substrate having a groove and a ridge formed on the top surface …

(57) ABSTRACT A nitride semiconductor light-emitting device wherein a Sub strate or nitride
semiconductor layer has a defect concentra tion region and a low defect density region other …

(57) ABSTRACT A nitride semiconductor chip is provided that offers enhanced luminous
efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip …

(57) ABSTRACT A nitride semiconductor chip is provided that offers enhanced luminous
efficacy and an increased yield as a result of an improved EL emission pattern and improved …

H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED
EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING …