In recent years, an increasing number of 2D van der Waals (vdW) materials are theory‐
predicted or laboratory‐validated to possess in‐plane (IP) and/or out‐of‐plane (OOP) …

III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral
displacement) and twisting (rotation) between atomically thin layers. By altering the stacking …

Conspectus Novel technologies and new materials are in high demand for future various
applications to overcome the fundamental limitations of current techniques. For example, the …

The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …

Ferroelectrics with electrically switchable spontaneous polarizations can be used for
information storage, where a low switching barrier is favorable to reduce the energy cost and …

The recent development of two-dimensional magnetic and sliding-ferroelectric van der
Waals (vdW) materials opens a new way to realize vdW sliding multiferroic tunnel junctions …

The ability to engineer potential profiles of multilayered materials is critical for designing
high-performance tunneling devices such as ferroelectric tunnel junctions (FTJs). FTJs …

In recent years, neuromorphic computing has been rapidly developed to overcome the
limitations of von Neumann architecture. In this regard, the demand for high‐performance …

Two-dimensional bilayer structures exhibit novel properties not existing in the monolayer
ones like bilayer hexagonal boron nitride (h-BN) with exotic interfacial ferroelectrics …