Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
The development of advanced electronic devices is contingent upon sustainable material
development and pioneering research breakthroughs. Traditional semiconductor-based …
development and pioneering research breakthroughs. Traditional semiconductor-based …
A Monolithically Integrable Reconfigurable Antenna Based on Large-Area Electronics
Reconfigurable antennas introduce unique and dynamic system capabilities for wireless
communication and sensing, by enabling controllable radiation pattern, frequency response …
communication and sensing, by enabling controllable radiation pattern, frequency response …
Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications
Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL)
compatible transistors and monolithic three-dimensional integration. Experimentally …
compatible transistors and monolithic three-dimensional integration. Experimentally …
First Demonstration of Top-Gate Enhancement-Mode ALD In2O3 FETs with High Thermal Budget of 600 °C for DRAM Applications
In this work, for the first time, we report top-gate In 2 O 3 FETs with enhancement-mode (E-
mode) operation and a high thermal budget of C, being compatible with dynamic random …
mode) operation and a high thermal budget of C, being compatible with dynamic random …
Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light …
Abstract The amorphous In─ Ga─ Zn─ O (a‐IGZO) thin film transistors (TFTs) have
attracted attention as a cell transistor for the next generation DRAM architecture because of …
attracted attention as a cell transistor for the next generation DRAM architecture because of …
Enhanced stability in InSnO transistors via ultrathin in-situ AlOx passivation
J Li, Y Chen, Q Gao, T Cao, J Ma, D Li, L Zheng… - Applied Surface …, 2024 - Elsevier
In this study, we present the impact of an ultrathin in-situ AlO x passivation layer on the
electrical performance and stability of InSnO (ITO) transistors. Devices incorporating an …
electrical performance and stability of InSnO (ITO) transistors. Devices incorporating an …
Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs
A technique for the transfer-free growth of 2-inch wafer-scale patterned graphene directly on
GaN LED epilayers is introduced. High-quality graphene as transparent electrodes and heat …
GaN LED epilayers is introduced. High-quality graphene as transparent electrodes and heat …
Unraveling the role of post-annealing in IGZO transistor for memory applications
N Kim, J Jeong, JW Lee, J Woo - Microelectronic Engineering, 2025 - Elsevier
We demonstrate that post-annealing techniques are important for achieving the transfer
characteristics of indium‑gallium‑zinc oxide (IGZO) transistors and identify that their role …
characteristics of indium‑gallium‑zinc oxide (IGZO) transistors and identify that their role …
First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel
In this letter, we provide the first experimental demonstration of 3D-stacked 2T0C DRAM
cells based on indium tin oxide (ITO) FETs. The 3D sequential integration process steps …
cells based on indium tin oxide (ITO) FETs. The 3D sequential integration process steps …
Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion
Heterogenous and monolithic 3-D (M3D) integration of III–V RF devices on Si CMOS is a
very attractive technology for future wireless communication systems. However, the self …
very attractive technology for future wireless communication systems. However, the self …