[HTML][HTML] New approaches and understandings in the growth of cubic silicon carbide
In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
Single-defect phonons imaged by electron microscopy
Crystal defects affect the thermal and heat-transport properties of materials by scattering
phonons and modifying phonon spectra,,,,,,–. To appreciate how imperfections in solids …
phonons and modifying phonon spectra,,,,,,–. To appreciate how imperfections in solids …
A review of sample thickness effects on high-resolution transmission electron microscopy imaging
High-resolution transmission electron microscopy (HRTEM) is an important approach to
analyzing material structures. However, in reality, preparing a sufficiently thin sample for use …
analyzing material structures. However, in reality, preparing a sufficiently thin sample for use …
[HTML][HTML] Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries
The presence of extended bi-dimensional defects is one of the key issues that hinder the
use of wide band-gap materials hetero-epitaxially grown on silicon. In this work, we …
use of wide band-gap materials hetero-epitaxially grown on silicon. In this work, we …
[HTML][HTML] Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
Emerging wide bandgap semiconductor devices such as the ones built with SiC have the
potential to revolutionize the power electronics industry through faster switching speeds …
potential to revolutionize the power electronics industry through faster switching speeds …
[HTML][HTML] Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars
In this paper we report the morphology and the microstructural properties of thick [1 1 1]-
oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. This compliant …
oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. This compliant …
[HTML][HTML] Advanced approach of bulk (111) 3C-SiC epitaxial growth
Abstract 3C-SiC films grown on (111) Si substrates exhibit poor crystal quality and
experience wafer cracks and bowing preventing access to bulk growth. This work reports …
experience wafer cracks and bowing preventing access to bulk growth. This work reports …
[HTML][HTML] Designing silicon carbide heterostructures for quantum information science: challenges and opportunities
Silicon carbide (SiC) can be synthesized in a number of different structural forms known as
polytypes with a vast array of optically active point defects of interest for quantum information …
polytypes with a vast array of optically active point defects of interest for quantum information …
Room-temperature wafer bonding of SiC–Si by modified surface activated bonding with sputtered Si nanolayer
F Mu, K Iguchi, H Nakazawa, Y Takahashi… - Japanese journal of …, 2016 - iopscience.iop.org
A modified surface activated bonding (SAB) with Fe–Si multi-nanolayers is expected to
achieve the wafer bonding of SiC to various materials. However, Fe diffusion, which affects …
achieve the wafer bonding of SiC to various materials. However, Fe diffusion, which affects …
Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC
M Zimbone, EG Barbagiovanni… - Crystal Growth & …, 2020 - ACS Publications
Domain boundaries (DBs) generated during the growth of cubic silicon carbide (3C-SiC) on
(001) Si and their interaction with stacking faults (SFs) were studied in this work. Direct …
(001) Si and their interaction with stacking faults (SFs) were studied in this work. Direct …