We present a comparative study of the C-face and Si-face of 3C-SiC (111) grown on off-
oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method …

Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed
with an emphasis on the enhanced understanding of polytype stability in relation to growth …

The nucleation of cubic (3C) SiC on on-axis 6H-SiC was investigated in the temperature
range 1500–1775° C by the technique of sublimation epitaxy. We have studied two different …

Graphene is, due to its extraordinary properties, a promising material for future electronic
applications. A common process for the production of large area epitaxial graphene is a high …

Annealing of silicon-carbon nanoparticles was performed in argon at atmospheric pressure
to enable formation of silicon carbide nanomaterials and/or carbon structures. Three …

Cubic silicon carbide is a promising material for medium power electronics operating at high
frequencies and for the subsequent growth of gallium nitride for more efficient light emitting …

Abstract The 3C-SiC (111) was grown on on-axis 6H-SiC substrates in a temperature
interval ranging from 1675° C where 3C-SiC nucleated, to 1825° C where coverage of the …

We measure the infrared reflectance spectra of 3C-SiC epilayers on silicon substrates from
400 to 4000 cm− 1. An ideal model assuming smooth interfaces and a modified model …

Transmission electron microscopy and the cathodoluminescence method have been used to
study the transition region in 3C–SiC/6H–SiC heterostructures. It is shown that this region is …

From magnetoresistivity effect measurements the carrier mobility at room temperature is
found to be 200 cm 2 V− 1 s− 1 in heteroepitaxially grown 3C-SiC on 6H-SiC by sublimation …