The past and future of multi-gate field-effect transistors: Process challenges and reliability issues
Y Sun, X Yu, R Zhang, B Chen… - Journal of …, 2021 - iopscience.iop.org
This work reviews the state-of-the art multi-gate field-effect transistor (MuGFET) process
technologies and compares the device performance and reliability characteristics of the …
technologies and compares the device performance and reliability characteristics of the …
Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 Passivation
In this letter, we report the first study of the dependence of carrier mobility and drive current I
Dsat of Ge 0.958 Sn 0.042 p-channel metal-oxide-semiconductor field-effect transistors …
Dsat of Ge 0.958 Sn 0.042 p-channel metal-oxide-semiconductor field-effect transistors …
Comparative leakage analysis of GeOI FinFET and Ge bulk FinFET
We present a comparative leakage analysis of germanium-on-insulator (GeOI) FinFET and
germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to …
germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to …
Gate stack reliability of MOSFETs with high-mobility channel materials: Bias temperature instability
To sustain the historical trend of performance enhancement of metal-oxide-semiconductor
field-effect transistors (MOSFETs) for high-performance and low-power logic applications …
field-effect transistors (MOSFETs) for high-performance and low-power logic applications …
Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel
CW Chen, CT Chung, JY Tzeng… - IEEE electron device …, 2013 - ieeexplore.ieee.org
In this paper, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs
directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion …
directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion …
Effective Schottky barrier lowering of NiGe/p-Ge (100) using Terbium interlayer structure for high performance p-type MOSFETs
SB Eadi, JC Lee, HS Song, J Oh, GW Lee, HD Lee - Scientific reports, 2020 - nature.com
Ultra-low contact resistance at the interface between NiGe and p-Ge, ie, NiGe/p-Ge was
achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN …
achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN …
Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
We demonstrate the integration of high performance p-channel Germanium Multiple-Gate
Field-Effect Transistors (MuGFETs) on a Germanium-on-Insulator substrate. Detailed …
Field-Effect Transistors (MuGFETs) on a Germanium-on-Insulator substrate. Detailed …
Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
We report the first demonstration of a p-channel Ω-gate Germanium (Ge) multiple-gate field-
effect transistor (MuGFET) on a Germanium-on-Insulator (GeOI) substrate with in situ Boron …
effect transistor (MuGFET) on a Germanium-on-Insulator (GeOI) substrate with in situ Boron …
Epitaxial Germanium on SOI Substrate and Its Application of Fabricating High Ratio Ge FinFETs
CT Chung, CW Chen, JC Lin, CC Wu… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Integrating germanium (Ge) thin film on silicon-on-insulator (SOI) substrate and fabricating
Ge fin field-effect transistors (FinFETs) are demonstrated in this paper. Directly grown Ge film …
Ge fin field-effect transistors (FinFETs) are demonstrated in this paper. Directly grown Ge film …
Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain
The high performance Ge pMOSFETs have been realized with ultrathin HfO2/AlOx/GeOx/Ge
gate-stacks fabricated by ozone postoxidation (OPO) and NiGe metal source/drain (S/D). It is …
gate-stacks fabricated by ozone postoxidation (OPO) and NiGe metal source/drain (S/D). It is …