Gallium-doped silver–indium–sulfide (Ga-doped AgInS2) samples were deposited onto
fluorine-doped-tin-oxide (FTO) glass substrates using a one-step electrodeposition method …

We have investigated the semi-conducting properties and photoelectrochemical
characterization of Ag2S thin films electrodeposited galvanostatically onto silver substrate …

In this study, Ag–In–S ternary system semiconductor materials in thin film form were
deposited on indium-tin-oxide coated glass substrates with various molar ratios of two …

Spray pyrolysis was used to prepare films of AgInS2 (AIS) with and without Sn as an
extrinsic dopant. The photoelectrochemical performance of these films was evaluated after …

Ga-doped AgIn5S8 films are grown on indium–tin-oxide-coated glass substrates using
chemical bath deposition. The structural, optical, and photoelectrochemical properties of the …

The Sb-doped AgIn5S8 films were grown on indium–tin–oxide substrates using chemical
bath deposition. The X-ray diffraction patterns of samples show the polycrystalline AgIn5S8 …

Optical and electrical properties of silver indium sulfide (AgInS 2) thin films prepared by two-
step process is discussed by varying the deposition time (T d) of silver from 12 to 18 min …

Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as
ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on …

Most of the I-III-VI2 compounds are direct gap semiconductors and they crystallize with the
chalcopyrite structure [1-4]. They have attracted a lot of attention due to their potential …

AgInSnS4 thin films were prepared by adding a tin salt to the starting solution used for
preparing chalcopyrite AgInS2 thin films by spray pyrolysis The AgInSnS4 films were grown …