Recently, mainstream silicon (Si)-based materials and complementary metal oxide
semiconductor (CMOS) technology have been used in developing extremely tiny sized (of a …

The subthreshold leakage current in transistors has become a critical limiting factor for
realizing ultralow-power transistors. The leakage current is predominantly dictated by the …

Electrostatic doping aims at replacing donor/acceptor dopant species with free electron/hole
charges induced by the gates in ultrathin MOS structures. Highly doped N+/P+ terminals and …

A ferroelectric based electrostatic doping (Fe-ED) technique is proposed, as the alternative
to chemical doping, providing non-volatile and programmable free electrons and holes for …

Van der Waals heterostructures provide a versatile tool to not only protect or control, but also
enhance the properties of a 2D material. We use ab initio calculations and semianalytical …

Problems with doping in nanoscale devices or low temperature applications are widely
known. Our approach to replace the degenerate doping in source/drain (S/D)-contacts is …

The author presents all aspects, in theory and experiments, of nanoelectronic devices
starting from field-effect transistors and leading to alternative device concepts such as …

The fabrication and characterization of steep slope transistor devices based on low-
dimensional materials requires precise electrostatic doping profiles with steep spatial …

We hereby present experimental demonstration of the energy-efficient ferroelectric based
electrostatically doping (Fe-ED) reconfigurable field-effect transistors (RFETs). By …

In recent years, nanoelectronics has become very interdisciplinary requiring students to
master aspects of physics, electrical engineering, chemistry etc. The 2nd edition of this …