Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure
This study examines the operational parameters of field-effect transistors (FETs) using single-
gate (SG) and double-gate (DG) graphene nanoribbons (GNRs) within the analog/RF …
gate (SG) and double-gate (DG) graphene nanoribbons (GNRs) within the analog/RF …
Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors
L Zhang, Z Sun, J Li, J Su - Chinese Physics B, 2024 - iopscience.iop.org
The instability of plasma waves in the channel of field-effect transistors will cause the
electromagnetic waves with THz frequency. Based on a self-consistent quantum …
electromagnetic waves with THz frequency. Based on a self-consistent quantum …
[HTML][HTML] Impact of contact resistance on the performances of graphene field-effect transistor through analytical study
Currently, owing to its remarkable electro-mechanical, thermal, and optical properties,
graphene has attracted tremendous attention in the research community as one of the most …
graphene has attracted tremendous attention in the research community as one of the most …
[PDF][PDF] OPTIMAL MANUFACTURING METHOD FOR MINIMIZING POWER CONSUMPTION IN COMPUTER CHIPS
FH Khorsheed - ijprems.com
There are multiple methods available for producing computer chips, and each method has
its own advantages and disadvantages. To assess these methods, we must take into …
its own advantages and disadvantages. To assess these methods, we must take into …