In this review we have examined the crystallization behavior of a-Si over the
temperaturerange from 500° C to∼ 1380° C. We have shown that SPE is a thermally …

The ion-beam-induced epitaxial crystallization (IBIEC) and planar amorphization of
amorphous Si (a-Si) layers onto single-crystal Si substrates is reviewed. In particular, the …

Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …

An energetic electron beam has been used to stimulate crystallization of spatially isolated
amorphous regions in Si, Ge, GaP, and GaAs at 30 and 300 K. In the four materials it was …

Extensive experimental investigations have been reported on the ion-induced motion of the
interface between the crystalline and amorphous phases of silicon. The crystal grows into …

Abstract By high-energy (∼ 2.5-MeV) heavy-ion (75 As+, Kr+ 84, Xe+ 1 3 1, 1 3 2, etc.) beam
irradiation, the amorphous Si layers on the crystalline Si substrates formed by low-energy …

The ion-bombardment-induced reversible movement of a planar amorphous/crystalline
interface in silicon has been studied between 100 and 400° C. The temperature …

Abstract The High Fluence Irradiation Facility at the University of Tokyo, which had provided
a platform for dual-beam irradiation in Japan, was severely damaged by the 2011 …

In order to study the behaviour of fluorapatite towards irradiation due to incorporated alpha-
emitters, single crystals of this mineral have been bombarded with 220 keV Pb ions …

In this paper we report detailed experimental measurements on the dependence of the ion-
beam-induced epitaxial crystallization (IBIEC) of amorphous silicon on dopant …