Terahertz emitters and detectors made on high-resistivity InGaAsP: Fe photoconductors
A terahertz (THz) time-domain spectrometer built entirely from a pair of emitter and detector
made on ion-implanted InGaAsP: Fe substrates is characterized for the first time. THz …
made on ion-implanted InGaAsP: Fe substrates is characterized for the first time. THz …
High-power, broadband terahertz radiation from large area plasmonic photoconductive emitters operating at telecommunication optical wavelengths
NT Yardimci, M Jarrahi - 2016 IEEE MTT-S International …, 2016 - ieeexplore.ieee.org
We present a high-power, broadband terahertz emitter that operates at telecommunication
optical pump wavelengths at which high-performance and compact fiber lasers are …
optical pump wavelengths at which high-performance and compact fiber lasers are …
Plasmonic large-area photoconductive emitters operating at 1550 nm
NT Yardimci, M Jarrahi - 2016 41st International Conference on …, 2016 - ieeexplore.ieee.org
We present a novel large-area photoconductive terahertz emitter based on a 2D plasmonic
nano-antenna array and compatible with telecommunication optical wavelengths. We …
nano-antenna array and compatible with telecommunication optical wavelengths. We …
Origine de la réduction de la durée de vie des photoporteurs dans le InGaAsP implanté à basse température
L Vincent - 2016 - papyrus.bib.umontreal.ca
Un matériau semi-conducteur utilisé lors de la fabrication d'antennes térahertz (THz), le
quaternaire InGaAsP (E_g= 0, 79 eV), subit une implantation ionique de Fe suivi d'un recuit …
quaternaire InGaAsP (E_g= 0, 79 eV), subit une implantation ionique de Fe suivi d'un recuit …