Nanometre-thin indium tin oxide for advanced high-performance electronics

S Li, M Tian, Q Gao, M Wang, T Li, Q Hu, X Li, Y Wu - Nature materials, 2019 - nature.com
Although indium tin oxide (ITO) is widely used in optoelectronics due to its high optical
transmittance and electrical conductivity, its degenerate doping limits exploitation as a …

The roadmap of 2D materials and devices toward chips

A Liu, X Zhang, Z Liu, Y Li, X Peng, X Li, Y Qin, C Hu… - Nano-Micro Letters, 2024 - Springer
Due to the constraints imposed by physical effects and performance degradation, silicon-
based chip technology is facing certain limitations in sustaining the advancement of Moore's …

Atomically thin bioelectronics

D Kireev, S Kutagulla, J Hong, MN Wilson… - Nature Reviews …, 2024 - nature.com
Tissue-like bioelectronics have emerged as practical, user-friendly and unobtrusive systems
for seamless bidirectional integration with the human body. Two-dimensional materials …

Effects of plasma-treatment on the electrical and optoelectronic properties of layered black phosphorus

S Kuriakose, T Ahmed, S Balendhran, GE Collis… - Applied Materials …, 2018 - Elsevier
Exfoliated few-layer black-phosphorus (BP) has been explored for a variety of electrical and
optoelectronic applications. Plasma-assisted thinning of BP has emerged as an exciting …

Recent developments in black phosphorous transistors: a review

A Pon, A Bhattacharyya, R Rathinam - Journal of Electronic Materials, 2021 - Springer
Abstract Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene,
and transition metal dichalcogenides have attracted intense research attention because of …

Black phosphorus high-frequency transistors with local contact bias

C Li, K Xiong, L Li, Q Guo, X Chen, A Madjar… - ACS …, 2020 - ACS Publications
Having a sizable band gap and high carrier mobility, black phosphorus (BP) is a promising
two-dimensional material for high-frequency electronic and optoelectronic devices. Further …

An Infrared Photoinverter With a GeSe 2-D/PbSe Heterostructure and its application in spectroscopy detectors

X Liu, HX Lin, ZY Hang, ZW Tang, Z Liu… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this letter, an infrared photoinverter with a GeSe 2-D/-PbSe heterostructure and a high
detectivity (Jones) and responsivity (6 V/W) has been proposed for applications in …

Black phosphorus radio frequency electronics at cryogenic temperatures

T Li, M Tian, S Li, M Huang, X Xiong… - Advanced Electronic …, 2018 - Wiley Online Library
Black phosphorus (BP) has great potential in high‐performance radio frequency electronics
owing to its high carrier mobility and velocity. The electrical properties of black phosphorus …

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

X Li, X Xiong, Y Wu - Chinese Physics B, 2017 - iopscience.iop.org
Recently, black phosphorus (BP) has joined the two-dimensional material family as a
promising candidate for electronic and photonic applications due to its moderate bandgap …

A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications

LM Valdez-Sandoval, E Ramírez-García… - IEEE Microwave and …, 2021 - ieeexplore.ieee.org
This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC
performances of black-phosphorus field-effect transistors (BPFETs). The proposed EC is …