Nitrogen doped indium oxide (InON) and indium tin oxide (ITON) thin films were fabricated
with reactive sputtering in nitrogen-rich plasmas for high temperature thermocouples …

Semiconductor thin-film thermocouples (TFTCs) are widely used for temperature
measurement of aero-engine components due to their large output and fast response. As a …

Hole conductivity and photoluminescence (PL) were studied in Mg-doped InN films grown
by molecular beam epitaxy. Because surface electron accumulation interferes with carrier …

In contrast to most semiconductors, electrical conductivity of InN is known to increase upon
high-energy particle irradiation. The effects of irradiation on its thermal and thermoelectric …

We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency
plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined …

A method for depth profiling of the resistivity, carrier concentration, carrier mobility, and
Seebeck coefficient is proposed. This method is based on the measured sheet resistance …

Measuring p-type transport properties by the Hall method in the presence of a parallel n-type
carrier system with higher mobility is challenging as the measurement often indicates an …

The large electron affinity of InN, close to 6 eV and the largest of any III–V semiconductor,
creates a strong driving force for native donor formation, both in the bulk and at surfaces and …

Photoreflectance (PR) and microwave-reflectance photoconductivity-decay (μ-PCD) have
been applied to study the surface band bending in Mg-doped InN layers with various Mg …

The majority of InN doping studies have primarily focused on Mg, as it has previously been
used to successfully realize p-type GaN. Here, we consider an alternative dopant—Mn—as …