Silicon-Carbide (SiC) devices with superior performance over traditional silicon power
devices have become the prime candidates for future high-performance power electronics …

In order to take the full advantage of the high-temperature SiC and GaN operating devices,
package materials able to withstand high-temperature storage and large thermal cycles …

Transient liquid phase (TLP) bonding is a bonding technique that has attracted several
applications in high-temperature electronics, in particular, power electronics packaging. The …

This paper proposes a double-end sourced layout for multichip SiC MOSFET power module
adopting conventional wire-bonded packaging technology. The unique design provides …

A bonding technology is introduced by using surface polished porous Ag in die-attachment
structure. Bonding strength did not change much as the chip size varied from 3× 3 mm 2 to …

The reach and impact of the Internet of Things will depend on the availability of low-cost,
smart sensors—“low cost” for ubiquitous presence, and “smart” for connectivity and …

Sintered silver paste is a popular material for die attachment technology in power
electronics. However, using traditional nano-silver paste when fabricating sintered joints has …

Wafer-level solid liquid interdiffusion (SLID) bonding, also known as transient liquid-phase
bonding, is becoming an increasingly attractive method for industrial usage since it can …

摘要碳化硅作为宽禁带半导体的代表, 理论上具有极其优异的性能, 有望在大功率电力电子变换
器中替换传统硅IGBT, 大幅提升变换器的效率以及功率密度等性能. 但是目前商用碳化硅功率 …

Solid-state porous Ag was utilized to achieve interface bonding under low temperature and
low-pressure for large area, high-reliability designs for high performance die-attach power …