This work explored the properties of RF magnetron sputtered Sn-doped Ga 2 O 3 films
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …

We proposed a simple method to deposit a vertically graded oxygen-vacancy active layer
(VGA) to enhance the positive bias stress (PBS) stability of amorphous indium gallium zinc …

A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO
deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of …

In this paper, amorphous Li–N co-doped InZnAlO (IZAO:(Li, N)) thin film transistors (TFTs)
with staggered bottom-gate structure were fabricated on SiO 2/Si substrates by radio …

This paper reports the influence of annealing temperature on crystalline size, film
roughness, surface morphology and photoluminescence properties of ZnO thin films …

Magnesium zinc tin oxide (MZTO) quaternary systems were prepared using solution-
processed method. Assessment of the Mg dopant content of the MZTO quaternary system …

High temperature represents a critical constraint in the development of gas sensors.
Therefore, investigating gas sensors operating at room temperature holds significant …

In this study, transparent Li–N co-doped ZnSnO (ZTO:(Li, N)) thin film transistors (TFTs) with
a staggered bottom-gate structure were fabricated by radio frequency magnetron sputtering …

ZnO co-doped with Al and H (HAZO) films were exposed to H/Ar plasma for various
durations (0–60 min) at 400° C to study the effects of heat treatment in H/Ar plasma on the …

With the growing need for large area display technology and the push for a faster and
cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the …